Goptica’s UV maskless lithography machine BEAM allows nano-patterning to be performed at will without the need for slow and expensive lithography masks. This convenience is beneficial for research and rapid prototyping. On the premise of maintaining the original performance, Goptica makes its small desktop more convenient for users to use and lower cost.

Working mode: The beam engine focuses the UV laser beam to the diffraction-limited point and scans that point to expose arbitrary patterns on the photoresist. To expose large wafers, a precision stepper moves the wafer and allows multiple exposures to be stitched. The beam engine has the ability to produce less than (CD) 0.8μm  on wafers up to 6 inches.

• Product Specifications & Manuals

Brochure:  

• Model/Parameters	BEAM Lite	BEAM	BEAM XL
  resolution	10x = 1.5 μm，5x = 3 μm	0.8 μm	0.8 μm
  Maximum sample size	5"	5"	6"
  Thickness of the sample substrate	0.1mm ~ 8mm
  Write-through mode	Vector or raster mode
  Laser wavelength	405 nm, 375 nm (Optional)
  Autofocus	Piezo-based autofocus
  The gray level of the image	On request
  align	Upper alignment	Upper alignment	Upper or lower alignment
  XY axis alignment resolution	< 1 μm
  XY Stage Repeatability (1σ)	0.1 μm
  Z-axis resolution	10 nm	10 nm	10 nm
  Write Speed (mm2/min)	10x = 20，5x = 80	5	5
  Maximum field written	10x = 800 μm 5x = 1600 μm	400 μm	400 μm
  Lithography area	106 mm x 106 mm		150 mm  x 150 mm
  Supported file formats	BMP, PNG, TIFF, GDS
  Dimensions of the whole machine   (W x D x H) mm	330 x 310 x 340	330 x 310 x 340	370 x 360 x 340
  The weight of the whole machine	20 kg	20 kg	30 kg
  Compatible with laptops	Optional	contain
  Software	Includes BEAM Lite software	BEAM software included
  Working environment	a) No specific environmental conditions or cleanrooms are required. b) Except for vibration, the temperature should be 35°C (± 3°C or ±4°C) and the humidity should be less than 70%.

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Sample examples

		Resist micropattern array on silicon substrate. Each unit is: 50 × 63 μm with a spacing of 3 μm between adjacent patterns. Resist used: AZ5214E
0.8 μm conical middle section with 20 ✕ 90 μm contact pads on the sides. Resist used: AZ5214E
		Open-loop resonator array. The separation distance on the right is 1.5 μm (arrow), The separation distance on the left is 2 μm. The outer ring has a diameter of 80 μm.