Working mode: The beam engine focuses the UV laser beam to the diffraction-limited point and scans that point to expose arbitrary patterns on the photoresist. To expose large wafers, a precision stepper moves the wafer and allows multiple exposures to be stitched. The beam engine has the ability to produce less than (CD) 0.8μm  on wafers up to 6 inches.

Benefits:

1. Pocket-sized

UV maskless lithography machine: BEAM is smaller than a desktop computer and cost-effective. Modules for each part of the systemBlocking, can be freely combined and configured, bringing users a more flexible and affordable optimal choice.

2. Powerful

With sub-micron resolution, an exposure pattern can be written in less than two seconds.

3. Ultra-fast autofocus

When combined with our closed-loop focusing optics, piezoelectric actuators operate in less than a second

Inner reach focus.

4. Effortless multi-layer alignment

Semi-automatic alignment allows for multi-layer alignment to be completed in a matter of minutes.

The included software can quickly complete any pattern job; Just load, align, and expose. Navigation is similar to a CNC system.During multi-layer exposure, the GDS pattern is overlaid for visualization. The control GUI (left window) has a minimap of the loaded GDS that allows navigation to any area on the wafer with one click.

Resist micropattern array on silicon substrate. Each unit is:

50 × 63 μm with a spacing of 3 μm between adjacent patterns.

Resist used: AZ5214E

Next-generation performance: Outpaces previous models with higher resolution, faster exposuresand enhanced process flexibility.

Advanced patteming capabilities: Native greyscale and seamless stitching expand the range ofachievable micro- and nano-structures,supporting cutting-edge device fabrication.

Operational efficiency: Lower maintenance needs translate to more uptime and lower total cost ofownership.